STS4C3F30L Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 30V - 0.044Ω - 5A - SO-8 STripFET™ Power MOSFET

STS4C3F30L
1
Electrical ratings
Electrical ratings
Note:
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
N-channel
P-channel
V_DS
Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20 kΩ)
V_GS
Gate- source voltage
I_D
Drain current (continuos) at T_C = 25°C S.O.
I_D
I_DM ⁽¹⁾
Drain current (continuos) at T_C = 100°C S.O.
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25°C D.O.
Total dissipation at T_C = 25°C S.O.
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area
30
30
± 16
5
2.7
3.2
1.7
20
11
1.6
2
-60 to 150
150
V
V
V
A
A
A
W
W
W/°C
°C
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
Table 2. Thermal data
Symbol
Parameter
R_thj-case
T_l
Thermal resistance junction-case S.O.
Thermal resistance junction-case D.O.
Maximum lead temperature for soldering
purpose
Value
62.5
78.0
300
Unit
°C/W
°C/W
°C
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