STS3DPFS30L Datasheet, PDF (3/5 Pages) STMicroelectronics – P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

STS3DPFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 1.5 A
R_G = 4.7 Ω V_GS = 4.5 V
(Resistive Load, see fig. 3)
V_DD = 15 V I_D = 3 A V_GS = 4.5 V
Min.
Typ.
15
37
Max.
5.5 7.5
1.7
1.8
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t_d(off)
tr
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
15
29
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3 A VGS = 0
t_rr
Reverse
Time
Q_rr
Reverse
Charge
Recovery I_SD = 3 A di/dt = 100 A/µs
VDD = 15V Tj = 150 ^oC
Recovery (see test circuit, figure 5)
I_RRM
Reverse
Current
Recovery
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
3
12
Unit
A
A
2
V
18
ns
12
nC
1.33
Α
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
IR(∗)
VF(∗)
Parameter
Test Conditions
Reversed
Current
Leakage TJ= 25 ^oC
T_J= 125 ^oC
VR=30V
V_R=30V
Forward Voltage drop TJ= 25 ^oC
T_J= 125 ^oC
IF=3A
I_F=3A
Min.
Typ.
0.03
0.38
Max.
0.2
100
0.51
0.46
Unit
mA
mA
V
V
3/5