STPS6M100DEE Datasheet, PDF (3/8 Pages) STMicroelectronics – High voltage power Schottky rectifier

STPS6M100DEE
Characteristics
Figure 1. Average forward power dissipation Figure 2.
versus average forward current
PF(AV)(W)
6
5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
IF(AV)(A)
7
6
Average forward current versus
ambient temperature( = 0.5)
Rth(j-a)= Rth( j- c)
4
δ=1
3
2
T
1
IF(AV)(A)
δ =tp/T
tp
0
0
1
2
3
4
5
6
7
8
5
4
3
2
T
1
δ =tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
P_ARM (t p )
1 ^{PARM(10 µs)}
0.1
0.01
0.001
1
t _p(µs)
10
100
1000
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
tp(s)
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5.
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 6.
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
C(pF)
1000
100
1.E-02
1.E-03
1.E-04
0
Tj = 50 °C
Tj = 25 °C
VR(V)
10 20 30 40 50 60 70 80 90 100
10
1
Junction capacitance versus
reverse voltage applied (typical
values)
F=1 MHz
VOSC=30 mVRMS
Tj =25 °C
VR(V)
10
100
Doc ID 023259 Rev 1
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