STPS61150CW Datasheet, PDF (3/4 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS61150CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
400
350
300
250
200
150
100
IM
50
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Tc=50°C
Tc=75°C
Tc=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 ^{δ = 0.5}
0.5
0.4 _{δ = 0.2}
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
C(pF)
10000
1000
1.E+00
Tj=25°C
1.E-01
VR(V)
10
30
50
70
90
110
130
150
100
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
1000
Fig. 9: Forward voltage drop versus forward
current (per diode).
IFM(A)
100.0
Tj=125°C
(maximum values)
10.0
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
1.0
VFM(V)
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
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