STPS30SM120S Datasheet, PDF (3/14 Pages) STMicroelectronics – Power Schottky rectifier

STPS30SM120S
Characteristics
Figure 2. Average forward power dissipation Figure 3.
versus average forward current
P_F(AV)(W)
35
I_F(AV)(A)
35
30
δ = 0.2
δ = 0.5
δ=1
30
δ = 0.1
25
δ = 0.05
25
20
20
Average forward current versus
ambient temperature (δ = 0.5)
Rth(j-a) = Rth(j-c)
15
15
10
5
0
0
10
T
δ = t_p / T t_p
5
I_F(AV)(A)
0
5
10
15
20
25
30
35
40
0
T_amb(°C)
25
50
75
100
125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Relative variation of thermal
impedance junction to case versus
pulse duration
 ^{3$50W33$50—V}






W3—V

Z_th(j-c)/R_th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 ^{Single pulse}
0.2
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
t_p(s)
1.E+00
Figure 6.
Reverse leakage current versus
reverse voltage applied
(typical values)
1.E+02 ^IR(mA)
Tj=150°C
1.E+01
Tj=125°C
Figure 7.
C(pF)
10000
Junction capacitance versus
reverse voltage applied
(typical values)
F=1MHz
Vosc =30mVRMS
Tj=25°C
1.E+00
1.E-01
Tj=100°C
Tj=75°C
Tj=50°C
1000
1.E-02
Tj=25°C
1.E-03
0
V_R(V)
10 20 30 40 50 60 70 80 90 100 110 120
100
1
V_R(V)
10
100
1000
DocID022919 Rev 2
3/14
14