STPS3045DJF Datasheet, PDF (3/7 Pages) STMicroelectronics – Power Schottky rectifier

STPS3045DJF
Characteristics
Figure 1.
24 ^PF(AV)(W)
20
16
12
8
4
0
0
5
Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
δ = 0.1
δ = 0.05
δ = 0.2
10
15
20
25
δ = 0.5
δ=1
T
δ = t_p / T t_p
I_F(AV)(A)
30
35
40
35 ^IF(AV)(A)
30
25
20
15
10
T
5
δ = t_p / T t_p
0
0
25
R_th(j-a) = R_th(j-c)
T_amb(°C)
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
t_p(µs)
1
10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
220 ^IM(A)
200
180
160
140
120
100
80
60
40 I_M
20
0
1.E-03
t
δ = 0.5
1.E-02
1.E-01
T_c = 25 °C
T_c = 75 °C
T_c = 125 °C
t(s)
1.E+00
Figure 6.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
1.0 ^{Zth(j-c)/Rth(j-c)}
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
t_p(s)
1.E+00
Doc ID 16758 Rev 3
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