STPS2L60ZFY Datasheet, PDF (3/8 Pages) STMicroelectronics – Surface mount miniature packages

STPS2L60ZFY
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
1.8 ^PF(AV)(W)
1.6
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5 δ = 1
1.4
1.2
1.0
0.8
0.6
0.4
T
0.2
I_F(AV) (A)
δ = tp/T
tp
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Characteristics
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
I_F(AV)(A)
7
6
R_th(j-a)=R_th(j-l)
5
4
3
2
T
1
δ= tp/T
tp
0
0
25
50
75
SOD123Flat
Tamb(°C)
100
125
150
175
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
P_ARM(t p )
1 ^{PARM(10 µs)}
0.1
0.01
0.001
1
t _p(µs)
10
100
1000
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Z_th(j-l)/R_th(j-l)
1.0
0.9 ^{SOD123 flat}
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
t_p(s)
1.E+00
1.E+01
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
1.E+02 ^IR(mA)
1.E+01
T_j = 150 °C
T_j = 125 °C
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
1000 ^C(pF)
F = 1 MHz
V_OSC = 30 mV_RMS
T_j = 25 °C
1.E+00
T_j = 100 °C
T_j = 75 °C
100
1.E-01
T_j = 50 °C
1.E-02
1.E-03
0
T_j = 25 °C
V_R(V)
5 10 15 20 25 30 35 40 45 50 55 60
10
1
V_R(V)
10
100
DocID029446 Rev 2
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