STP90NS04ZC Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel clamped 5mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET

STP90NS04ZC
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DG
V_GS
I_D ⁽²⁾
I_D ⁽²⁾
I_DG
I_GS
I_DM ⁽³⁾
P_TOT
Drain-source voltage (V_GS = 0)
drain-gate voltage
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C=100°C
Drain gate current (continuous)
Gate-source current (continuous)
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S)
V_ESD(G-D)
V_ESD(D-S)
T_J
T_stg
Gate-source ESD (HBM-C=100pF, R=1.5KΩ)
Gate-drain ESD (HBM-C=100pF, R=1.5KΩ)
Drain-source ESD (HBM-C=100pF, R=1.5KΩ)
Operating junction temperature
Storage temperature
1. Voltage is limited by zener diodes
2. Current limited by wire bonding
3. Pulse width limited by safe operating area
Table 2. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche data
Symbol
Parameter
I_AS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
E_AS
Single pulse avalanche energy (starting
Tj=25°C, I_D=I_AS, V_DD=50V)
Electrical ratings
Value
33 ⁽¹⁾
33 ⁽¹⁾
±20 ⁽¹⁾
80
80
±50
±50
320
280
1.87
±8
±8
±8
-55 to 175
Unit
V
V
V
A
A
A
A
A
W
W/°C
kV
kV
kV
°C
Value
0.53
62.5
300
Value
80
750
Unit
°C/W
°C/W
°C
Unit
A
mJ
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