STP200N4F3 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET

STB200N4F3 - STP200N4F3
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM ⁽²⁾
P_TOT
E_AS ⁽³⁾
dv/dt⁽⁴⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Single pulse avalanche energy
Peak diode recovery voltage slope
T_j
Operating junction temperature
T_stg
Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, I_D = 60A, V_DD= 25V
4. I_SD ≤60A, di/dt ≤440 A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX.
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1. When mounted on FR-4 board, 1inch² 2 oz. Cu.
Electrical ratings
Value
40
±20
120
120
480
300
2.0
862
4.2
-55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
°C
Value
TO-220
D²PAK
0.50
--
35
62.5
--
Unit
°C/W
°C/W
°C/W
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