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STP16NK65Z Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
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STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
650
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6.5 A
0.38 0.50
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (*) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 6.5 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 6.5 V to 520 V
VDD = 325 V, ID = 6.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 17)
VDD = 520 V, ID = 13 A,
VGS = 10 V
(see Figure 20)
Typ. Max. Unit
12
S
2750
pF
275
pF
60
pF
188
pF
25
ns
25
ns
68
ns
17
ns
89
nC
18
nC
45
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
13
A
52
A
VSD (1) Forward On Voltage
ISD = 13 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see Figure 18)
500
ns
5.2
µC
21
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see Figure 18)
615
ns
7
µC
22.5
A
(1) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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