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| STN888 Datasheet, PDF (3/9 Pages) STMicroelectronics – HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR | |||
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STN888
2 Electrical Characteristics
2 Electrical Characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ICBO
Collector Cut-off Current
(IE = 0)
VCB = -30V
VCB = -30V
____TC = 100°C
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -6V
V(BR)CEO Collector-Emitter
Note: 1 Breakdown Voltage (IB = 0)
IC = -10mA
-30
Collector-Base
-45
V(BR)CBO Breakdown Voltage (IE = 0)
IC = -100μA
Emitter-Base
-6
V(BR)EBO Breakdown Voltage (IC = 0)
IE = -100μA
VCE(sat) Collector-Emitter Saturation
Note: 1 Voltage
IC = -500mA_____ IB = -5mA
IC = -2A_____
IB = -50mA
IC = -5A_____
IB = -250mA
IC = -6A_
____ IB = -250mA
IC = -8A _____
IB = -400mA
IC = -10A ___ __ IB = -500mA
VBE(sat) Base-Emitter Saturation Voltage IC = -2A ____
Note: 1
IC = -6A ____
IB = -50mA
IB = -250mA
IC = -10mA
VCE = -1 V 120
IC = -500mA
VCE = -1 V 100
hFE
DC Current Gain
Note: 1
IC = -5 A
VCE = -1 V 70
IC = -5 A VCE = -1 V tj = 100°C
IC = -8 A
VCE = -1 V
IC = -10 A
VCE = -1 V
-0.7
-1.0
-1.2
-1.2
200
200
100
100
55
35
-10
-100
-10
-0.15
-0.35
-0.70
-1.1
300
INDUCTIVE LOAD
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC = -3A ____ _
IB1 = -IB2 =-60mA
(see Figure 7)
VCC = -20V
180 220
160 210
250 300
80
100
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
Unit
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
ns
ns
ns
ns
3/9
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