STL7DN6LF3 Datasheet, PDF (3/18 Pages) STMicroelectronics – Automotive-grade dual N-channel 60 V

STL7DN6LF3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS Drain-source voltage
60
V_GS Gate-source voltage
±20
I_D(1),(2) Drain current (continuous) at T_C = 25 °C
20
I_D ⁽¹⁾
Drain current (continuous) at T_C = 100 °C
16
I_D ⁽⁴⁾
Drain current (continuous) at T_pcb = 25 °C
6.5
I_D ⁽⁴⁾
Drain current (continuous) at T_pcb=100 °C
4.6
I_DM(3),(4) Drain current (pulsed)
26
P_TOT Total dissipation at T_C = 25°C
52
P_TOT ⁽⁴⁾ Total dissipation at T_pcb = 25°C
4.3
I_AV
Not-repetitive avalanche current
6.5
E_AS ⁽⁵⁾ Single pulse avalanche energy
190
T_J
Operating junction temperature
T_stg
Storage temperature
-55 to 175
1. Specified by design. Not subject to production test.
2. Current is limited by bonding, with an R_thJC = 2.9 °C/W the chip is able to carry 22 A at 25 °C.
3. Pulse width limited by safe operating area
4. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
5. Starting T_J= 25 °C, I_D= 8 A, V_DD= 25 V
Unit
V
V
A
A
A
A
A
W
W
A
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value
2.9
35
Unit
°C/W
°C/W
DocID023010 Rev 4
3/18
18