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STL66DN3LLH5 Datasheet, PDF (3/15 Pages) STMicroelectronics – Switching applications
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STL66DN3LLH5
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
ID(1)
ID (1)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
ID
Drain current (continuous) at Tpcb = 25 °C
ID
IDM(2),(3)
Drain current (continuous) at Tpcb=100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
PTOT Total dissipation at Tpcb = 25°C
TJ
Operating junction temperature
Tstg
Storage temperature
1. Specified by design. Not subject to production test.
2. Pulse width limited by safe operating area
3. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche data
Symbol
Parameter
Not-repetitive avalanche current,
IAV
(pulse width limited by TJ max)
EAS(1)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
1. Per channel.
Electrical ratings
Value
Unit
30
V
± 22
V
78.5
A
55.5
A
20
A
14.2
A
80
A
72
W
4.7
W
-55 to 175
°C
Value
2.08
32
Unit
°C/W
°C/W
Value
Unit
18.5
A
270
mJ
Doc ID 022353 Rev 2
3/15
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