STL100NH3LL Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0032ohm - 25A PowerFLAT (6x5) STripFET III MOSFET

STL100NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g_fs (5) Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
t_d(on)
t_r
t_d(off)
t_r
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
R_G
Gate Input Resistance
Test Conditions
V_DS = 10 V_, I_D=12,5 A
V_DS = 25V, f = 1 MHz, V_GS = 0
V_DD = 15 V, I_D = 12.5 A,
R_G= 4.7 Ω V_GS = 10 V
(see Figure 15)
V_DD = 15V, I_D = 25 A,
V_GS = 4.5V
(see Figure 17)
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM (3)
Source-drain Current
Source-drain Current (pulsed)
V_SD (4) Forward On Voltage
I_SD = 25 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 25 A, di/dt = 100A/µs
V_DD = 25 V, T_j = 150°C
(see test circuit, Figure 16)
Note:
(1)The value is according Rthj-pcb
(2)The value is according R_thj-c
(3) Pulse width limited by safe operating area.
(4) When mounted on FR-4 board of 1 in² , 2oz Cu, t < 10 sec
(5) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Min.
1
Min.
Typ.
30
4450
655
50
18
50
75
8
30
12.5
10
2
Typ.
32
34
2.1
Max. Unit
S
pF
pF
pF
ns
ns
ns
ns
40
nC
nC
nC
3
Ω
Max. Unit
25
A
100
A
1.3
V
ns
nC
A
3/10