English
Language : 

STGB3NB60KD Datasheet, PDF (3/12 Pages) STMicroelectronics – N-CHANNEL 6A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT PROOF PowerMESH TM IGBT
◁
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
SWITCHING PARAMETERS
Symbol
Parameter
gfs (1) Forward Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
tscw
Short Circuit Withstand Time
td(on)
tr
(di/dt)on
Eon
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Test Conditions
VCE = 25V, Ic = 3 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480V, IC = 3 A,
VGE = 15V
Vce = 0.5 VBR(CES), VGE=15V,
Tj = 125°C , RG = 10 Ω
VCC = 480 V, IC = 3 A
RG = 10Ω, VGE = 15 V
VCC= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 25 °C
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
Min.
10
Typ.
2.4
220
50
5.8
14
3.3
7.5
14
5
520
30
90
20
33
100
58
85
190
54
90
130
111
195
Max.
18
Unit
S
pF
pF
pF
nC
nC
nC
µs
ns
ns
A/µs
µJ
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
Forward Current
Ifm
Forward Current Pulsed
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
trr
Reverse Recovery Time
If = 3 A ,VR = 35 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula:
IC(TC)
=
----------------------------T----J--M-----A----X-----–-----T----C-----------------------------
RTHJ – C × VCESAT(MAX)(TC, IC)
Min. Typ. Max. Unit
3
A
24
A
1.2
1.8
V
0.95
V
45
ns
70
nC
2.7
A
3/12
 ▷