STF13NK50Z Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET

STx13NK50Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, TO-247 TO-220FP
V_DS
V_GS
I_D
I_D
I_DM(2)
P_TOT
dv/dt⁽³⁾
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous)
at T_C = 25 °C
Drain current (continuous)
at T_C=100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
Peak diode recovery voltage slope
500
± 30
11
11⁽¹⁾
6.93
44
140
1.12
4.5
6.93⁽¹⁾
44⁽¹⁾
30
0.24
V
V
A
A
A
W
W/°C
V/ns
V_ISO
Insulation withstand voltage (RMS)
from all three leads to external heat sin
(t=1 s;T_C= 25 °C)
T_J
Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 11 A, di/dt ≤ 200 A/µs, V_DD ≤ 80% V_(BR)DSS
2500
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
TO-220
Value
TO-247
Unit
TO-220FP
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
0.89
62.5
50
300
4.17
°C/W
62.5
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AR, V_DD= 50 V)
11
A
240
mJ
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