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| STE70IE120 Datasheet, PDF (3/7 Pages) STMicroelectronics – Monolithic Emitter Switched Bipolar Transistor ESBT® 1200 V - 70 A - 0.014 Ω Power Module | |||
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STE70IE120
2
Electrical characteristics
Electrical characteristics
Table 3. Electrical characteristics
(TCase = 25°C, unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
ICS(SS) Collector-source current VCE = 1200V
(VBS = VGS = 0)
IBS(OS) Base-source current
(IC = 0, VGS = 0V)
VBS(OS) = 40V
ISB(OS) Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 10V
IGS(OS) Gate-source leakage
VGS = ± 20V
VCS(ON) Collector-source ON
voltage
VGS = 10V_IC = 70A IB = 14A
VGS = 10V_IC = 45A IB = 4.5A
hFE DC current gain
VGS = 10V_VCS = 1V_IC = 70A 3
VGS = 10V_VCS = 1V_IC = 45A 6
VBS(ON) Base-emitter ON
voltage
VGS = 10V__IC = 70A _IB = 14A
VGS = 10V__IC = 45A_IB = 4.5A
VGS(th) Gate threshold voltage VBS = VGS __ IB = 250µA
3
Ciss Input Capacitance
VCS = 25V __ f=1MHz
VGS = VCB = 0
QGS(tot) Gate-source charge
VCS = 25V ___VGS = 10
VCB = 0______IC = 70A
Typ. Max. Unit
100 µA
10 µA
100 µA
500 nA
1
V
1
V
7
13
tbd
V
tbd
V
3.7 4.5 V
tbd
pF
tbd
nC
3/7
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