STE53NC50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh™II MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 250V, I_D = 26.5A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
V_DD = 400V, I_D = 53A,
V_GS = 10V
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 400V, I_D = 53A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 53A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 53A, di/dt = 100A/µs,
V_DD = 70V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STE53NC50
Min. Typ. Max. Unit
46
ns
70
ns
310
434
nC
46
nC
150
nC
Min. Typ. Max. Unit
45
ns
38
ns
85
ns
Min. Typ. Max. Unit
53
A
212
A
1.6
V
760
ns
17.86
µC
47
A
Safe Operating Area
Thermal Impedence
3/8