STE48NM60 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.09W - 48A ISOTOP MDmesh-TM Power MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 250V, I_D = 22.5A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
V_DD = 400V, I_D = 45A,
V_GS = 10V
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 400V, I_D = 45A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 45A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 45A, di/dt = 100A/µs,
V_DD = 100 V, T_j = 25°C
(see test circuit, Figure 5)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 45A, di/dt = 100A/µs,
V_DD = 100 V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STE48NM60
Min. Typ. Max. Unit
30
ns
20
ns
96
134
nC
31
nC
43
nC
Min.
Typ.
16
23
40
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
48
A
192
A
1.5
V
508
ns
10
µC
40
A
650
ns
14
µC
43
A
Safe Operating Area
Thermal Impedance
3/8