STE40NK90ZD_06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 900V - 0.14Ω - 40A ISOTOP Super FREDmesh™ MOSFET

STE40NK90ZD
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt ⁽²⁾ Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (AC-RMS) from all
four terminals to external heatsink
T_j
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤40A, di/dt ≤500 A/µs, V_DD ≤V_(BR)DSS
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AR, V_DD = 35 V)
Electrical ratings
Value
900
900
± 30
40
25
160
600
5
7
8
2500
- 65 to 150
Unit
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
°C
0.2
°C/W
40
°C/W
Max. Value
Unit
40
A
1.2
J
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