STE38NB50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

STE38NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V
ID = 19 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 38 A VGS = 10 V
Min.
Typ.
46
32
159
35
67
Max.
64
45
223
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V
ID = 38 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
56
53
120
Max.
78
74
168
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM(•)
VSD (∗)
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 38 A VGS = 0
ISD = 38 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 ^oC
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
38
152
Unit
A
A
1.6
V
950
ns
12
µC
25
A
Safe Operating Area
Thermal Impedance
3/8