STE30NK90Z Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH™ MOSFET

STE30NK90Z
ELECTRICAL CHARACTERISTICS (T_CASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 1 mA, V_GS = 0
900
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (VGS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
10
µA
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100 µA
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 150 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 14 A
0.21 0.26
Ω
Table 8: Dynamic
Symbol
Parameter
g_fs (1) Forward Transconductance
C_iss
C_oss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C_{oss eq.} (3) Equivalent Output
Capacitance
td(on)
t_r
t_d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q_g
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
V_DS = 15 V_, I_D = 14 A
V_DS = 25V, f = 1 MHz, V_GS = 0
V_GS = 0V, V_DS = 0V to 720 V
VDD = 450 V, ID = 13 A
R_G = 4.7Ω V_GS = 10 V
(see Figure 17)
V_DD = 720 V, I_D = 26 A,
VGS = 10V
(see Figure 20)
Min.
Typ.
26
12000
852
166
Max.
377
67
59
250
72
350
490
51
190
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM (2)
Source-drain Current
Source-drain Current (pulsed)
28
A
112
A
VSD (1) Forward On Voltage
ISD = 28 A, VGS = 0
2
V
trr
Qrr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 18)
1
µs
18.9
µC
36.6
A
trr
Qrr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 26 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 18)
1.33
µs
25.2
µC
37.8
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
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