STE180N05 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE180N05
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symb ol
t_{r(Vof f)}
t_f
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 40 V I_D = 180 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 180 A V_GS = 0
trr
Reverse Recovery
Time
Q_rr Reverse Recovery
Charge
ISD = 180 A
di/dt = 100 A/µs
VDD = 25 V Tj = 150 ^oC
(see test circuit, figure 3)
I_RRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
40
315
440
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
180
540
Unit
A
A
1.6
V
160
ns
480
nC
6
A
Safe Operating Area
Thermal Impedance
3/8