STE100N20 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE100N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symb ol
t_{r(Vof f)}
t_f
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 160 V I_D = 100 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 100 A V_GS = 0
trr
Reverse Recovery
Time
Q_rr Reverse Recovery
Charge
ISD = 100 A
di/dt = 100 A/µs
VDD = 30 V Tj = 150 ^oC
(see test circuit, figure 3)
I_RRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
230
155
370
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
100
400
Unit
A
A
1.6
V
580
ns
3.5
µC
12
A
Safe Operating Area
Thermal Impedance
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