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| STE07DE220 Datasheet, PDF (3/7 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07Ω power module | |||
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STE07DE220
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source
current (VBS =VGS = 0)
VCS = 2200 V
Base-source current
IBS(OS) (IC =0, VGS = 0)
VBS = 40 V
Source-base current
ISB(OS) (IC =0, VGS = 0)
VSB = 9 V
Gate-source leakage
IGS(OS) (VBS = 0)
VGS = ± 20 V
VCS(ON)
Collector-source ON
voltage
VGS = 10 V IC = 7 A IB = 1.4 A
VGS = 10 V IC = 3.5 A IB = 0.35 A
hFE DC current gain
VGS = 10 V VCS = 1 V IC = 7 A
VGS = 10 V VCS = 1 V IC = 3.5 A
VBS(ON)
Base-source ON
voltage
VGS = 10 V IC = 7 A IB = 1.4 A
VGS = 10 V IC = 3.5 A IB = 0.35 A
VGS(th) Gate threshold voltage VBS = VGS IB = 250 µA
3
Input capacitance
Ciss
(VGS = VCB = 0)
VCS = 25 V f = 1 MHz
Gate-source charge
QGS(tot) (VCB = 0)
VCS = 25 V VGS = 10 V
IC = 7 A
Inductive load
ts
Storage time
tf
Fall time
VGS = 10 V
VClamp = 1760 V
IC = 3.5 A
RG = 47 â¦
tp = 4 µs
IB = 0.7 A
Inductive load
ts
Storage time
tf
Fall time
VGS = 10 V
VClamp = 1760 V
IC = 3 .5 A
RG = 47 â¦
tp = 4 µs
IB = 0.35 A
100 µA
10 µA
100 µA
500 nA
0.5
V
0.4
V
9
15
1
V
0.8
V
3.7 4.5 V
t.b.d.
pF
t.b.d.
nC
t.b.d.
ns
t.b.d.
ns
t.b.d.
ns
t.b.d.
ns
3/7
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