STDD15 Datasheet, PDF (3/6 Pages) STMicroelectronics – LOW CAPACITANCE DETECTION DIODE

STDD15 series
Fig. 1: Forward voltage drop versus forward
current (typical values).
IFM(mA)
1.E+02
1.E+01
Tj=125°C
1.E+00
Tj=85°C
Tj=25°C
Tj=-40°C _VFM(V)
1.E-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1.E+02
1.E+01
Tj=125°C
1.E+00
Tj=85°C
1.E-01
1.E-02
Tj=25°C
VR(V)
1.E-03
0.0
2.5
5.0
7.5
10.0
12.5
15.0
Fig. 3: Differential forward resistance versus
forward current (typical values).
RF(Ω)
100
F=10kHz
Tj=25°C
10
IF(mA)
1
1.0
10.0
100.0
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
2.5
F=1MHz
Vosc =30mVRMS
Tj=25°C
VR(V)
5.0
7.5
10.0
12.5
15.0
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board, epoxy FR4).
Zth(j-a)(°C/W)
1000.0
100.0
10.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4)..
Rth(j-a)
600
550
500
450
400
350
300
0
S(mm²)
5
10 15 20 25 30 35 40 45 50
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