STD9NM60N Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

STD9NM60N, STF9NM60N, STP9NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
V_ISO
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 6.5 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-pcb ⁽¹⁾
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum
footprint
R_thj-amb
T_l
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
Unit
TO-220, DPAK TO-220FP
600
V
± 25
V
6.5
6.5 ⁽¹⁾
A
4
4 ⁽¹⁾
A
26
26 ⁽¹⁾
A
70
25
W
2500
V
15
- 55 to 150
150
V/ns
°C
°C
Value
Unit
DPAK TO-220 TO-220FP
1.79
5
°C/W
50
°C/W
62.5
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V)
Value
Unit
2.5
A
115
mJ
Doc ID 18063 Rev 1
3/16