STD95N4F3_09 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220 STripFET™ III Power MOSFET

STD95N4F3, STP95N4F3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 80 A, di/dt ≤ 400A/µs, V_DS ≤ V_(BR)DSS, Tj ≤ Tjmax
4. Starting Tj = 25 °C, I_D = 40 A, V_DD = 30 V
Value
40
± 20
80
65
320
110
0.73
8
400
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-a Thermal resistance junction-ambient max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering purpose
1. When mounted on 1inch² FR-4 2Oz Cu board
Value
TO-220
DPAK
1.36
62.5
50
300
Unit
°C/W
°C/W
°C/W
°C
Doc ID 13288 Rev 3
3/14