STD878 Datasheet, PDF (3/10 Pages) STMicroelectronics – Very low collector to emitter saturation voltage

STD878, STN878
2
Electrical characteristics
Electrical characteristics
T_case = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_CBO
Collector cut-off current ^V_CB ^{= 30 V}
(I_E = 0)
V_CB = 30 V;
T_C = 100 °C
10 µA
100 µA
Emitter cut-off current
I_EBO
(I_C = 0)
) ^{Collector-emitter}
t(s ^{V(BR)CEO (1) breakdown voltage}
(I_B = 0)
roduc ^V(BR)CBO
Collector-base
breakdown voltage
(I_E = 0)
te ^{P V(BR)EBO}
Emitter-base breakdown
voltage (I_C = 0)
Obsole ^{VCE(sat) (1)}
Collector-emitter
saturation voltage
ct(s) ^- _VBE(sat) ⁽¹⁾
Base-emitter saturation
voltage
te ^{Produ h}FE ^{(1) DC current gain}
Obsole Resistive load
V_EB = 6 V
I_C = 10 mA
I_C = 100 µA
I_E = 100 µA
I_C = 0.5 A
I_C = 2 A
I_C = 5 A
I_C = 6 A
I_C = 8 A
I_C = 10 A
I_C = 2 A
I_C = 6 A
I_C = 10 mA
I_C = 500 mA
I_C = 5 A
I_C = 5 A
T_c = 100 °C
I_C = 8 A
I_C = 10 A
10 µA
30
V
45
V
6
V
I_B = 5 mA
I_B = 50 mA
I_B = 0.25 A
I_B = 0.25 A
I_B = 0.4 A
I_B = 0.5 A
0.15 V
0.35 V
0.7 V
0.7
V
1
V
1.2
V
I_B = 50 mA
I_B = 0.25 A
1.1 V
1.2
V
V_CE = 1 V 120 200
V_CE = 1 V 100 200 300
V_CE = 1 V 70 100
V_CE = 1 V
100
V_CE = 1 V
55
V_CE = 1 V
35
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
I_C = 3 A
V_CC = 20 V
I_B1 = - I_B2 = 60 mA
see Figure 8
180 220 ns
160 210 ns
250 300 ns
80 100 ns
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Doc ID 13836 Rev 2
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