English
Language : 

STD840DN40 Datasheet, PDF (3/9 Pages) STMicroelectronics – Dual NPN high voltage transistors in a single package
◁
STD840DN40
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICES
Collector cut-off
current (VBE = 0)
VCE = 700 V
VCE = 700 V Tc = 125 °C
ICEO
Collector cut-off
current (IB = 0)
VCE = 400 V
Emitter-base
V(BR)EBO breakdown voltage
IE = 10 mA
9
(IC = 0)
Collector-emitter
VCEO(sus)(1) sustaining voltage
IC = 10 mA
400
(IB = 0)
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 1 A
IC = 2 A
IB = 0.2 A
IB = 0.4 A
VBE(sat)(1)
Base-emitter
saturation voltage
IC = 1 A
IC = 2 A
IB = 0.2 A
IB = 0.4 A
hFE(1) DC current gain
IC = 10 mA
IC = 2 A
VCE = 5 V 10
VCE = 5 V 8
VF
Diode forward voltage IF = 1 A
Resistive load
ts
Storage time
tf
Fall time
IC = 1 A IB1 = - IB2 = 0.2 A
VCC = 125 V
tp = 20 µs
1. Pulse test: pulse duration ≤300 µs, duty cycle ≤ 2 %.
Typ.
2.5
0.2
Max. Unit
100 µA
500 µA
250 µA
18 V
V
0.5 V
1
V
1.2 V
1.3 V
24
2.5 V
µs
µs
Doc ID 16796 Rev 3
3/9
 ▷