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| STD830CP40 Datasheet, PDF (3/10 Pages) STMicroelectronics – Complementary transistor pair in a single package | |||
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STD830CP40
2
Electrical characteristics
Electrical characteristics
Note:
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
V(BR)EBO
Collector cut-off current
(VBE = 0)
Emitter-base breakdown
voltage (IC = 0)
For NPN:
VCE = 700 V
VCE = 700 V
For PNP:
VCE = 500 V
VCE = 500 V
IE = 10 mA
For NPN:
For PNP:
TC = 125°C
TC = 125°C
10
5
0.1 mA
0.5 mA
0.1 mA
0.5 mA
18
V
10
V
Collector-emitter
VCEO(sus)(1) sustaining voltage
IC = 5 mA
400
V
(IB = 0)
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 0.7 A
IC = 1 A
IB = 0.1 A
IB = 0.2 A
0.5 V
0.5 V
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 0.5 A_
_ IB = 0.1 A
IC = 1 A ____ IB = 0.2 A
1.1 V
1.2 V
IC = 10 mA
VCE = 5 V 10
hFE(1) DC current gain
IC = 0.7 A
VCE = 5 V 18
34
IC = 2 A
VCE = 5 V 4
Resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC = 0.7 A _ VCC = 250 V
100
ns
IB1 = 0.14 A_ IB2 = -0.14 A
2.4
µs
tp = 30 µs
100
ns
Inductive load
ts
Storage time
tf
Fall time
IC = 1 A _ _
IB1 = 0.2 A
VBE(off) = -5 V
RBB = 0
450
ns
Vclamp = 200 V L = 1 mH
100
ns
1. Pulse test: pulse duration ⤠300 µs, duty cycle â¤2 %.
For PNP types voltage and current values are negative
Doc ID 15767 Rev 3
3/10
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