STD826 Datasheet, PDF (3/10 Pages) STMicroelectronics – PNP MEDIUM POWER TRANSISTOR

STD826
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (T_CASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_CES Collector Cut-off Current
(V_BE = 0)
V_CE = -60V
-10
μA
I_CEO
Collector Cut-off Current
(I_B = 0)
V_CE = -30V
-100 μA
I_EBO
Emitter Cut-off Current
(I_C = 0)
V_EB = -5V
t(s) ^{Collector-Base}
c ^{V(BR)CBO Breakdown Voltage (I}E ^{= 0)}
I_C = -100μA
du ^{V(BR)CEO Collector-Emitter Breakdown}
ro ^{Note: 1 Voltage (IB = 0)}
I_C = -10 mA
te ^{P V(BR)EBO}
Collector-Emitter Breakdown
Voltage (I_C = 0)
I_E = -100 μA
le ^VCE(sat)
o Note: 1 ^{Collector-Emitter Saturation}
bs ^Voltage
I_C = -1 A
I_C = -2 A
I_C = -3 A
O V_{BE(sat) Base-Emitter Saturation Voltage} I_C = -2 A
- _{Note: 1}
uct(s) ^{hFE DC Current Gain}
I_C = -100 mA
I_C = -1 A
I_C = -3 A
rod ^fT
Transistor Frequency
V_CE = -10 V
Obsolete ^{P Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%.}
-10
μA
-60
V
-30
V
-5
V
I_B = -50 mA
I_B = -100 mA
I_B = -150 mA
I_B = -100 mA
-0.4
V
-0.7
V
-1.1
V
-1.2
V
V_CE = -2 V 100
300
V_CE = -2 V ⁸⁰
V_CE = -2 V ³⁰
I_c= - 0.1 A
100
MHz
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