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| STD790A_08 Datasheet, PDF (3/9 Pages) STMicroelectronics – Medium current, high performance, low voltage PNP transistor | |||
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STD790A
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -30 V
VCB = -30 V; TC = 100 °C
-10 µA
-100 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -4 V
-10 µA
Collector-emitter
V(BR)CEO (1) breakdown voltage
IC = -10 mA
-30
V
(IB = 0)
Collector-emitter
V(BR)CER (1) breakdown voltage
IC = -10 mA
-40
V
(RBE = 47 â¦)
Collector-base
V(BR)CBO breakdown voltage
IC = -100 µA
-40
V
(IE = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100 µA
-5
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = -0.5 A
IC = -1.2 A
IC = -2 A
IC = -3 A
IC = -3 A
TJ = 100 °C
IB = -5 mA
IB = -20 mA
IB = -20 mA
IB = -100 mA
IB = -100 mA
-0.15 V
-0.25 V
-0.5 V
-0.7 V
-0.9 V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = -1A
IB = -10 mA
-0.8 -1
V
VBE(on) (1) Base-emitter on voltage IC = -1 A
VCE = -2 V
-0.8 -1
V
hFE (1) DC current gain
IC = -10 mA VCE = -2 V 100 200 400
IC = -500 mA VCE = -2 V 100 200 400
IC = -1 A
VCE = -2 V 100
IC = -2 A
VCE = -1 V 100 160
IC = -3 A
VCE = -1 V 90 130
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