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| STD724 Datasheet, PDF (3/10 Pages) STMicroelectronics – NPN MEDIUM POWER TRANSISTORS | |||
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STD724
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Collector Cut-off Current
ICES
(VBE = 0)
VCE = 60V
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 30V
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
Collector-Base
V(BR)CBO Breakdown Voltage (IE = 0)
IC = 100μA
V(BR)CEO Collector-Emitter Breakdown
Note 1 Voltage (IB = 0)
IC = 10 mA
V(BR)EBO
Collector-Emitter Breakdown
Voltage (IC = 0)
IE = 100 μA
VCE(sat) Collector-Emitter Saturation
Note 1 Voltage
IC = 1 A
IC = 2 A
IC = 3 A
VBE(sat) Base-Emitter Saturation Voltage IC = 2 A
Note 1
hFE DC Current Gain
IC = 100 mA
IC = 1 A
IC = 3 A
fT
Transistor Frequency
VCE = 10 V
1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
10
100
10
60
30
5
IB = 50 mA
0.4
IB = 100 mA
0.7
IB = 150 mA
1.1
IB = 100 mA
1.2
VCE = 2 V 100
VCE = 2 V 80
300
VCE = 2 V 30
Ic= 0.1 A
100
Unit
μA
μA
μA
V
V
V
V
V
V
V
MHz
3/10
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