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STD60NH03L_06 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 60A - DPAK/IPAK STripFET TM III Power MOSFET
STD60NH03L - STD60NH03L-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating factor
EAS(2)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. Starting Tj=25°C, ID=30A, VDD=20V
Value
30
30
± 20
60
43
240
70
0.47
300
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-to ambient max
Rthj-pcb(1) Thermal resistance junction-to pcb max
TJ
Maximum lead temperature for soldering purpose
1. When mounted on minimum foot-print
2.14
°C/W
100
°C/W
43
°C/W
275
°C
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