STD5N52K3 Datasheet, PDF (3/23 Pages) STMicroelectronics – N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
D²PAK
Value
DPAK
IPAK
Unit
TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
dv/dt⁽³⁾
Drain- source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Peak diode recovery voltage slope
525
± 30
4.4
2.77
17.6
70
2.2
100
12
V_ISO Insulation withstand voltage (AC)
T_J Operating junction temperature
T_stg Storage temperature
- 55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 4.4 A, di/dt ≤ 100 A/µs,V_DS peak ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS.
4.4⁽¹⁾
2.77 ⁽¹⁾
17.6⁽¹⁾
25
2500
V
V
A
A
A
W
A
mJ
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max.
R_thj-amb
Thermal resistance
junction-ambient max
R_thj-pcb
Thermal resistance junction-pcb
max.
T_J
Maximum lead temperature for
soldering purpose
Value
Unit
TO-220 D²PAK TO-220FP IPAK DPAK
1.79
5
1.79
°C/W
62.5
100
°C/W
30
50 °C/W
300
300
°C/W
Doc ID 16952 Rev 2
3/23