STD4NK50ZD Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET

STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 IPAK/DPAK TO-220FP
V_DS
V_DGR
V_GS
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20KΩ)
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM(2)
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt⁽³⁾ Peak diode recovery voltage slope
V_ISO
T_J
T_stg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤3A, di/dt ≤200A/µs, V_DD =80%V_(BR)DSS
500
500
± 30
3
3 ⁽¹⁾
1.9
1.9 ⁽¹⁾
12
12 ⁽¹⁾
45
0.36
2800
15
--
--
-55 to 150
3 ⁽¹⁾
1.9 ⁽¹⁾
12 ⁽¹⁾
20
0.16
2500
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 IPAK/DPAK TO-220FP
2.78
62.5
100
6.25 °C/W
62.5 °C/W
300
°C
Table 3. Avalanche data
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
3
A
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
120
mJ
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