STD4N90K5 Datasheet, PDF (3/15 Pages) STMicroelectronics – Zener-protected

STD4N90K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
ID⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
± 30
3
1.9
12
60
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{ISD ≤ 3 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V.}
(3)_{VDS ≤ 720 V}
Symbol
Rthj-pcb⁽¹⁾
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Thermal resistance junction-ambient
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.}
Value
50
62.5
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value Unit
1
A
160 mJ
DocID029956 Rev 1
3/15