STD40NF03L Datasheet, PDF (3/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.012 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET

STD40NF03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 20 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig. 3)
V_DD = 24 V I_D = 40 A V_GS = 10 V
Min.
Typ.
20
170
35
5
10
Max.
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 20 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
40
60
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD =20 A V_GS = 0
t_rr
Q_rr
I _{R RM}
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I_SD = 20 A
V_DD = 15 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
70
105
2.4
Max.
20
80
1.5
Unit
A
A
V
ns
nC
A
3/6