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STD3NK50Z Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET
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STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.15 A
2.8
3.3
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 1.15 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 400 V
VDD = 250 V, ID = 1.15 A
RG = 4.7Ω VGS = 10 V
(see Figure 19)
VDD = 400 V, ID = 2.3 A,
VGS = 10V
(see Figure 22)
Min.
Typ.
1.5
280
42
8
Max. Unit
S
pF
pF
pF
27.5
pF
8
ns
13
ns
24
ns
14
ns
11
15
nC
2.5
nC
5.6
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.3
A
9.2
A
VSD (1) Forward On Voltage
ISD = 2.3 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =2.3 A, di/dt = 100 A/µs
VDD = 40V, Tj = 25°C
(see Figure 20)
250
ns
745
µC
6
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =2.3A, di/dt = 100 A/µs
VDD = 40V, Tj = 150°C
(see Figure 20)
300
ns
960
µC
6.2
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14
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