STD3NB50 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

STD3NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 250 V ID = 1.9 A
RG = 4.7 Ω
VGS = 10 V
Min.
Typ.
11
8
Max.
17
12
Unit
ns
ns
Qg
Total Gate Charge
VDD = 400 V ID =3.8 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
15
21
nC
6.5
nC
5
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 3.8 A
RG = 4.7 Ω VGS = 10 V
Min.
Typ.
8
5
14
Max.
12
9
20
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3.8 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 3.8 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 ^oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
3.8
15.2
Unit
A
A
1.6
V
245
ns
980
µC
8
A
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