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STD2NC70Z Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH™III MOSFET
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 350 V, ID = 1.25 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 560V, ID = 2.5A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 560V, ID = 2.5 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 2.3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2.5 A, di/dt = 100A/µs,
VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT
Voltage Thermal Coefficient
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
Rz
Dynamic Resistance
ID = 50 mA, VGS = 0
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
STD2NC70Z/STD2NC70Z-1
Min. Typ. Max. Unit
14
ns
11
ns
17
24
nC
4
nC
7
nC
Min.
Typ.
16
33
40
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
2.3
A
9.2
A
1.6
V
175
ns
0.6
µC
7.5
A
Min.
25
Typ.
1.3
90
Max. Unit
V
10-4/°C
Ω
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
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