STD2NB80 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET

STD2NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
Pa ram et e r
Turn-on delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
V_DD = 400 V I_D = 1.5 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 640 V I_D =3 A V_GS = 10 V
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 640 V I_D = 3 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 1. 9 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 2.6 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
12
10
Max.
Unit
ns
ns
17
24
nC
6.5
nC
7.5
nC
Min.
T yp.
15
17
22
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
1.9
7.6
Unit
A
A
1.6
V
650
ns
2.8
µC
8.5
A
Safe Operating Area
Thermal Impedance
3/9