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| STD2NB40 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET | |||
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STD2NB40
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 200 V ID = 1 A
RG = 4.7 â¦
VGS = 10 V
Qg
Total Gate Charge
VDD = 320 V ID =2 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 320 V ID = 2 A
RG = 4.7 ⦠VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(â¢)
Source-drain Current
Source-drain Current
(pulsed)
VSD (â) Forward On Voltage
ISD = 2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 2 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
(â) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(â¢) Pulse width limited by safe operating area
Min.
Typ.
14
25
Max.
Unit
ns
ns
22
nC
6
nC
9
nC
Min.
Typ.
13
24
12
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
2
8
Unit
A
A
1.5
V
460
ns
5.6
µC
24
A
3/6
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