STD2NA50 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD2NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 250 V
RG = 4.7 Ω
ID = 1.1 A
VGS = 10 V
VDD = 400 V
RG = 47 Ω
VDD = 400 V
ID = 2.2 A
VGS = 10 V
ID =2.2 A VGS = 10 V
Min.
Typ.
7
8
350
18
5.5
7
Max.
10
11
25
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V
RG = 4.7 Ω
ID = 2.2 A
VGS = 10 V
Min.
Typ.
7
7
14
Max.
10
10
20
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 2.2 A
VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 2.2 A
VDD = 100 V
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
380
4.4
23
Max.
2.2
8.8
1.6
Unit
A
A
V
ns
µC
A
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