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| STD2805 Datasheet, PDF (3/9 Pages) STMicroelectronics – Low voltage fast-switching PNP power transistor | |||
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STD2805
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE =0)
VCB = -60V
IEBO
Emitter cut-off current
(IC =0)
VEB = -5V
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC =-100µA
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC =-1mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE =-100µA
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =-100mA _ IB =-5mA
IC =-2A _ _ IB =-50mA
IC =-3A ___ IB =-150mA
IC =-5A ___ IB =-200mA
VBE(sat) (1)
Base-emitter saturation
voltage
IC =-2A _ _ IB =-50mA
hFE (1) DC current gain
IC =-100mA
IC =-5A
IC =-10A
VCE =-2V
VCE =-2V
VCE =-2V
fT
Transition frequency
VCE =-10V IC =-50mA
CCBO
Collector-base
capacitance
VCB =-10V f =1MHz
Resistive load
tON
Turn-on time
ts
Storage time
tf
Fall time
VCC = -30V IC = -1A
IB1 =-IB2 = -0.1A
Min. Typ. Max. Unit
0.1 µA
0.1 µA
-60
V
-60
V
-6
V
-50 mV
-150 -300 mV
-200 -400 mV
-600 mV
-0.9 -1.2 V
200
400
85
20
150
MHz
60
pF
80
ns
600
ns
70
ns
Note (1) Pulsed duration = 300 µs, duty cycle â¤1.5%
3/9
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