STD26NF10 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET

STD26NF10
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_DGR
Drain-gate voltage (R_GS = 20 kΩ)
V_GS
Gate- source voltage
I_D(1)
Drain current (continuous) at T_C = 25°C
I_D
I_DM(2)
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25°C
Derating Factor
dv/dt⁽³⁾ Peak diode recovery avalanche energy
E_AS ⁽⁴⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I_SD ≤35A, di/dt ≤300A/µs, V_DD =V(_BR)DSS, T_j ≤T_JMAX
4. Starting T_j = 25 °C, I_D = 12.5A V_DD = 50V
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-to ambient max
T_J
Maximum lead temperature for soldering purpose
Value
100
100
± 20
25
21
100
100
0.67
13
480
-55 to 175
1.5
100
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C/W
°C/W
°C
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