STD1NC60 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh™II MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 300V, I_D = 0.7 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
V_DD = 480V, I_D = 1.4 A,
V_GS = 10V
Test Conditions
V_DD = 480V, I_D = 1.4 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 1.4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 1.4 A, di/dt = 100A/µs,
V_DD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD1NC60
Min. Typ. Max. Unit
8
ns
8
ns
8.5
11.5
nC
2.8
nC
2.8
nC
Min.
Typ.
25
9
34
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
1.4
A
5.6
A
1.6
V
500
ns
950
nC
3.8
A
Safe Operating Area
Thermal Impedance
3/9