STD1NB60 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

STD1NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 300 V ID = 0.5 A
R_G = 4.7 Ω
V_GS = 10 V
Q_g
Total Gate Charge
V_DD = 480 V I_D = 1 A V_GS = 10 V
Q_gs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
t_r(Voff)
t_f
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 480 V I_D = 1 A
R_G = 4.7 Ω V_GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 1 A V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 1 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
13
15
Max.
Unit
ns
ns
7
10
nC
2
nC
3.5
nC
Min.
Typ.
27
32
35
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
1
4
Unit
A
A
1.6
V
350
ns
825
nC
4.7
A
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