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| STD1802_07 Datasheet, PDF (3/10 Pages) STMicroelectronics – Low voltage fast-switching NPN power transistor | |||
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STD1802
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE =0)
VCB = 40V
IEBO
Emitter cut-off current
(IC =0)
VEB = 4V
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC =100µA
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC =1mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE =100µA
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =2A _ _ IB =100mA
IC =3A __ _ IB =150mA
VBE(sat) (1)
Base-emitter saturation
voltage
IC =2A _ _ IB =100mA
hFE (1) DC current gain
IC =100mA VCE =2V
IC =3A
VCE =2V
fT
Transition frequency
VCE =10V IC =50mA
CCBO
Collector-base
capacitance
VCB =10V f = 1MHz
Resistive load
tON
Turn-on time
ts
Storage time
tf
Fall time
IC =1A
VCC =30V
IB1 =-IB2 =0.1A
Note (1) Pulsed duration = 300 µs, duty cycle â¤1.5%
Min. Typ. Max. Unit
0.1 µA
0.1 µA
80
V
60
V
6
V
150 300 mV
200 400 mV
0.9 1.2 V
200
400
100
150
MHz
50
pF
50
ns
1.35
µs
120
ns
3/10
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